On October 6th, 2010, Spire Semiconductor LLC (Hudson, New Hampshire, US) announced that it has created a gallium arsenide (GaAs) triple-junction solar photovoltaic (PV) cell with a peak efficiency of 42.3% under conditions of concentrated sunlight equal to 406 suns. Spire states that the efficiency of the 0.97cm2 cell has been verified by National Renewable Energy Laboratories (NREL, Golden, Colorado, US), and that the cell technology is production-ready. "In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency", states Spire Semiconductor General Manager Edward D. Gagnon.
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